GaN Solid State Transmitter

High Power SSPAs 

S-band Solid State Power Amplifiers – Efficient, High Power, and Compact with proven GaN transistor technology 

Features 

• High efficiency GaN transistors 

• BIT and controls via EIA-422 remote connection 

• 1.3 kW pulsed modules 

• 2 kW to 20 kW power combined 

CPI-Built RF Bricks 

CPI’s VSS3607 Solid State Power Amplifiers are rock-solid, highly-efficient and easy to maintain. The VSS3607 Solid State Power Amplifiers are designed for use in radar applications and cover the 2.7 – 2.9 GHz frequency band. Gallium Nitride transistors are combined into 1.3 kW bricks which are air cooled. The 1.3 kW bricks can be power-combined using radial combiners and waveguide combiners. 

Optimized for Pulsed Radars 

This amplifier utilizes GaN transistors to provide high gain, high efficiency and excellent pulse fidelity. The result is excellent AM/PM, phase-noise and spectral regrowth performance. This amplifier is compliant to NTIA regulatory requirements for this frequency.

Datasheet