Página inicial > MRFE6VP61K25H 1,250W Extremely Rugged RF LDMOS Transistor (50 V), for Applications from 1 to 600 MHz
MRFE6VP61K25H 1,250W Extremely Rugged RF LDMOS Transistor (50 V), for Applications from 1 to 600 MHz
Freescale’s rugged LDMOS transistors enable new applications and can bring enhanced reliability and performance to legacy designs
The portfolio is being expanded to cover additional power ranges and frequencies to 2000 MHz.
The MRFE6VP61K25H high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
- Power: 1250W CW P1dB at 50V
- Frequency: 1-600 MHz (unmatched input and output)
- Package: NI-1230 air-cavity ceramic package
- Configuration: Push-Pull (usable in Single Ended configuration)
- Extreme ruggedness: 65:1 VSWR
- Part of Freescale's longevity program: warranted availability until 2025
- Recommended driver: MRFE6VS25N (25W)
Reference Circuits available for the following frequencies (MHz):
Frequency (MHz) |
Signal Type |
Pout (W) |
Gps (dB) |
ηD (%) |
27 | CW | 1300 | 27 | 81 |
40 | CW | 1300 | 26 | 85 |
81.36 | CW | 1250 | 27 | 84 |
87.5-108 | CW | 1100 | 24 | 80 |
144-148 | CW | 1250 | 26 | 78 |
170-230 | DVBT | 225 | 25 | 30 |
352 | Pulse (200 µsec, 20% Duty Cycle) | 1250 | 21.5 | 66 |
352 | CW | 1150 | 20.5 | 68 |
500 | CW | 1000 | 18 | 58 |
- Laser generation
- Plasma etching
- FM broadcast
- VHF TV broadcast
- Synchrotron
- Amateur radio
- Low frequency radars
- MRI
- Medical
- Plasma lighting
