MRFE6VP61K25H 1,250W Extremely Rugged RF LDMOS Transistor (50 V), for Applications from 1 to 600 MHz

Freescale’s rugged LDMOS transistors enable new applications and can bring enhanced reliability and performance to legacy designs
 
 
 

The portfolio is being expanded to cover additional power ranges and frequencies to 2000 MHz.

The MRFE6VP61K25H high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

  • Power: 1250W CW P1dB at 50V
  • Frequency: 1-600 MHz (unmatched input and output)
  • Package: NI-1230 air-cavity ceramic package
  • Configuration: Push-Pull (usable in Single Ended configuration)
  • Extreme ruggedness: 65:1 VSWR
  • Part of Freescale's longevity program: warranted availability until 2025
  • Recommended driver: MRFE6VS25N (25W)

Reference Circuits available for the following frequencies (MHz):

 Frequency (MHz)

 Signal Type

 Pout (W)

 Gps (dB)

 ηD (%)

 27  CW  1300  27  81
 40  CW  1300  26  85
 81.36  CW  1250  27  84
 87.5-108  CW  1100  24  80
 144-148  CW  1250  26  78
 170-230  DVBT  225  25  30
 352  Pulse (200 µsec, 20% Duty Cycle)  1250  21.5  66
 352  CW  1150  20.5  68
 500  CW  1000 18   58

  • Laser generation
  • Plasma etching
  • FM broadcast
  • VHF TV broadcast
  • Synchrotron
  • Amateur radio
  • Low frequency radars
  • MRI
  • Medical
  • Plasma lighting


Datasheet
 
 
12 de fevereiro de 2015